Datasheet Details
| Part number | 3DD164F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.86 KB |
| Description | NPN Transistor |
| Datasheet | 3DD164F-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DD164F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.86 KB |
| Description | NPN Transistor |
| Datasheet | 3DD164F-INCHANGE.pdf |
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PD Total Power Dissipation@TC=75℃ 100 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W 3DD164F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 3DD164 | Low-power silicon NPN transistor | ETC |
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3DD164 | NPN Silicon Low Frequency High Power Transistor | Qunli Electric |
| Part Number | Description |
|---|---|
| 3DD167A | NPN Transistor |
| 3DD167B | NPN Transistor |
| 3DD167C | NPN Transistor |
| 3DD167D | NPN Transistor |
| 3DD167E | NPN Transistor |
| 3DD167F | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |