3DD3997 datasheet by Inchange Semiconductor.
| Part number | 3DD3997 |
|---|---|
| Datasheet | 3DD3997-INCHANGE.pdf |
| File Size | 208.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;.
View all Inchange Semiconductor datasheets
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|---|---|
| 3DD301B | Silicon Power Transistor |
| 3DD301C | Silicon Power Transistor |
| 3DD301D | Silicon Power Transistor |
| 3DD303A | Silicon Power Transistor |
| 3DD303B | Silicon Power Transistor |
| 3DD303C | Silicon Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
