Datasheet Details
| Part number | 3DD3997 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.30 KB |
| Description | NPN Transistor |
| Download | 3DD3997 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DD3997 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.30 KB |
| Description | NPN Transistor |
| Download | 3DD3997 Download (PDF) |
|
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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High frequency switching power supply ·High frequency power transform ·Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 60 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 3DD3997 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A;
| Part Number | Description |
|---|---|
| 3DD301B | Silicon Power Transistor |
| 3DD301C | Silicon Power Transistor |
| 3DD301D | Silicon Power Transistor |
| 3DD303A | Silicon Power Transistor |
| 3DD303B | Silicon Power Transistor |
| 3DD303C | Silicon Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |