Datasheet Details
| Part number | 3DD401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD401-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 3DD401.
| Part number | 3DD401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DD401-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3DD4013A1D | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD4013A6D | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD4013B1D | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD4018A1D | Silicon NPN bipolar transistor | Huajing Microelectronics |
| Part Number | Description |
|---|---|
| 3DD4244D | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
| 3DD102D | NPN Transistor |