3DD401 datasheet by Inchange Semiconductor.
| Part number | 3DD401 |
|---|---|
| Datasheet | 3DD401-INCHANGE.pdf |
| File Size | 217.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA;.
View 3DD4013A1D datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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3DD4013A1D | Silicon NPN Transistor | Huajing Microelectronics |
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3DD4013A6D | Silicon NPN Transistor | Huajing Microelectronics |
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3DD4013B1D | Silicon NPN Transistor | Huajing Microelectronics |
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3DD4018A1D | Silicon NPN bipolar transistor | Huajing Microelectronics |
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| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
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| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
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