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3DD4244D - NPN Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving light Electronic ballasts

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Energy-saving light · Electronic ballasts · High frequency switching power supply · High frequency power transform · Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB IBM Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Base Current-Peak 700 V 400 V 9 V 3.0 A 6.