3DD523 Description
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.
3DD523 is NPN Transistor manufactured by Inchange Semiconductor .
| Part Number | Description |
|---|---|
| 3DD5606 | NPN Transistor |
| 3DD5E | Silicon NPN Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.