3DD523 Overview
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.
| Part number | 3DD523 |
|---|---|
| Datasheet | 3DD523-INCHANGE.pdf |
| File Size | 198.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD5606 | NPN Transistor |
| 3DD5E | Silicon NPN Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |