Inchange Semiconductor 3DD7G
Silicon NPN Power Transistor
| Part No. | 3DD7G |
|---|---|
| Datasheet | 3DD7G Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
●Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range 7.5 A 75 W 175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.33 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7GELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 V(BR)CBO Collector-Base Br...