3DD880 Description
·DC Current Gain -hFE = 60-300@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...