Inchange Semiconductor 3DD880
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DD880 |
|---|---|
| Datasheet | 3DD880 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 60-300@ IC= 0.5A●Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.16 ℃/W 3DD880 isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitt...