Datasheet Details
| Part number | 3DD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.30 KB |
| Description | NPN Transistor |
| Datasheet | 3DD880-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 3DD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.30 KB |
| Description | NPN Transistor |
| Datasheet | 3DD880-INCHANGE.pdf |
|
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·DC Current Gain -hFE = 60-300@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.16 ℃/W 3DD880 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| 3DD880X | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
| 3DD102D | NPN Transistor |