3DD880 Overview
Description
DC Current Gain -hFE = 60-300@ IC= 0.5A - Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 3DD880 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 208.30 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |
| KD333 | Tesla Elektronicke | Transistor |
| C828 | SEMTECH | NPN Silicon Transistor |