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3DF5B - Silicon NPN Power Transistor

Description

With TO-3 packaging Excellent Safe Operating Area DC Current Gain- : hFE=15(Min)@IC = 2.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

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Part Number Description Manufacturer
3DF Fixed Inductors TOKO

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Excellent Safe Operating Area ·DC Current Gain- : hFE=15(Min)@IC = 2.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 5.0 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.
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