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3N150S - N-Channel MOSFET

Key Features

  • Drain Current ID= 2.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 1500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor 3N150S ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Plused 10 A PD Total Dissipation @TC=25℃ 63 W Tj Max.