Inchange Semiconductor 3N40
N-Channel MOSFET Transistor
FEATURES
●Drain Current ID= 3A@ TC=25℃●Drain Source Voltage- : VDSS= 400V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation 3N40
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APPLICATIONS
●Switch regulators●Switching converters motor drivers and relay drivers
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 12 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.9 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website: 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor●
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Sourc...