Inchange Semiconductor 3N50
N-Channel MOSFET Transistor
| Part No. | 3N50 |
|---|---|
| Datasheet | 3N50 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 3A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switching power supplies,converters,AC and DC motor controls●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 5 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W 3N50 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage...