40N20 - N-Channel MOSFET Transistor

Inchange Semiconductor

Key Features

Low RDS(on).
VGS Rated at ±20V.
Silicon Gate for Fast Switching Speed.
Rugged.
Low Drive Requirements.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

40N20 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	40N20
Manufacturer	Inchange Semiconductor
File Size	213.69 KB
Description	N-Channel MOSFET Transistor
Datasheet	40N20 Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N20 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power switching applications ·Hard switched and high frequency circuits ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Plused 160 A PD Total Dissipation @TC=25℃ 220 W Tj Max.