Inchange Semiconductor 4N90
N-Channel MOSFET Transistor
| Part No. | 4N90 |
|---|---|
| Datasheet | 4N90 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 3.6A@ TC=25℃●Drain Source Voltage- : VDSS= 900V(Min)
●Fast Switching Speed
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APPLICATIONS
●General purpose power amplifierABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 900 ±30 3.6 V V A ID(puls) Pulse Drain Current 11 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
(TC=25℃) isc Product Specification 4N90 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate...