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Ultra fast Rectifier
INCHANGE Semiconductor
60EPF02
FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=106℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 50Hz)
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
200
V
60
A
830
A
-40~150
℃
-40~150
℃
isc website:www.iscsemi.