Inchange Semiconductor 60N10
N-Channel MOSFET Transistor
| Part No. | 60N10 |
|---|---|
| Datasheet | 60N10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 60A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switching mode power supplies●General purpose power amplifier
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 60 A ID(puls) Pulse Drain Current 180 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 60N10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Bre...