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Schottky Barrier Rectifier
INCHANGE Semiconductor
6CWQ10FN
FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Typical applications are in disk drives, switching power supplies,
converters, free-wheeling diodes, battery charging, and reverse Battery protection.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
Peak Repetitive Reverse Voltage RMS Voltage
IF(AV)
Average Rectified Forward Current
100
V
7
A
IFSM
Non-repetitive Peak Surge Current
440
A
TJ
Junction Temperature
-40~150 ℃
Tstg
Storage Temperature Range
-40~150 ℃
isc website：www.iscsemi.
6CWQ10FN Datasheet
