6CWQ10FN - Schottky Barrier Rectifier

Inchange Semiconductor

Key Features

Low Forward Voltage.
Low Power Loss/High Efficiency.
High Surge Capacity.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

6CWQ10FN schottky barrier rectifier by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	6CWQ10FN
Manufacturer	Inchange Semiconductor
File Size	183.32 KB
Description	Schottky Barrier Rectifier
Datasheet	6CWQ10FN Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
6CWQ10FN	SCHOTTKY RECTIFIER	International Rectifier
6CWQ10FN	SCHOTTKY RECTIFIER	SANGDEST MICROELECTRONICS
6CWQ10FNPbF	Schottky Rectifier	Vishay
6CWQ03FN	SCHOTTKY RECTIFIER	International Rectifier
6CWQ03FN	SCHOTTKY RECTIFIER	SANGDEST MICROELECTRONICS

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky Barrier Rectifier INCHANGE Semiconductor 6CWQ10FN FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse Battery protection. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM Peak Repetitive Reverse Voltage RMS Voltage IF(AV) Average Rectified Forward Current 100 V 7 A IFSM Non-repetitive Peak Surge Current 440 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.