Inchange Semiconductor 6N55
N-Channel MOSFET Transistor
| Part No. | 6N55 |
|---|---|
| Datasheet | 6N55 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 6.0A@ TC=25℃●Drain Source Voltage- : VDSS= 550V(Min)
●Fast Switching Speed
APPLICATIONS
●General purpose power amplifierABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±30 6.0 V V A ID(puls) Pulse Drain Current 30 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.0 ℃/W 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
(TC=25℃) isc Product Specification 6N55 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS; ID=1mA IS=6.0A ;VGS= 0 RDS...