Inchange Semiconductor 6N70
N-Channel MOSFET Transistor
FEATURES
●Drain Current ID= 6A@ TC=25℃●Drain Source Voltage- : VDSS= 700V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.9Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Simple Drive Requirements
●DESCRITION
●Switch mode power supply.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 700 V Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous 6A Drain Current-Single Plused 24 A Total Dissipation @TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.83 ℃/W 40 ℃/W isc website: 1 PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD D...