Inchange Semiconductor 6N80
N-Channel MOSFET Transistor
| Part No. | 6N80 |
|---|---|
| Datasheet | 6N80 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 6A@ TC=25℃●Drain Source Voltage : VDSS= 800V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature●THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N80 ELECTRICAL CHARACTERISTI...
