6RI100G-120 Datasheet | Inchange Semiconductor

FEATURES - The chips are electrically insulated from bosom plate - High surge current - Low forward voltage drop - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - AC, DC Motor Drive/AVR/Switching for three phase rectification ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VRRM Repetitive Peak Reverse Voltage Output Current (D.C) IFSM Surge Forward Current I2t I2t for fusing Viso Maximum Power Dissipation Junction Temperature Tstg Storage Temperature Range CONDITIONS Tp=10ms TC=100℃ Half-sine wave,10ms， VR=0.6VRRM 50Hz,R.M.S,t=1ms,Iiso=1m A(max) VALUE UNIT A2S -40~150 ℃ -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.2 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark ELECTRICAL CHARACTERISTICS...