Inchange Semiconductor 75N75
TO-263 N-Channel MOSFET Transistor
| Part No. | 75N75 |
|---|---|
| Datasheet | 75N75 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-263 N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 75A@ TC=25℃●Drain Source Voltage- : VDSS= 75V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Solenoid and relay drivers●DC motor control
●DC-DC converters DC
●Automotive environment
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@TC=25℃ 75 ID A Drain Current-Continuous@TC=100℃ 60 IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.65 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL...