Inchange Semiconductor 8N18
N-Channel MOSFET Transistor
| Part No. | 8N18 |
|---|---|
| Datasheet | 8N18 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 8A@ TC=25℃●Drain Source Voltage- : VDSS= 180V(Min)
●Fast Switching Speed
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APPLICATIONS
●General purpose power amplifier●
ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 180 ±20 8 V V A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
(TC=25℃) isc Product Specification 8N18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS; ID=1mA IS=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Bo...