Inchange Semiconductor 8N80
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 8N80 |
|---|---|
| Datasheet | 8N80 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A●Drain Current –ID=8.0A@ TC=25℃
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay driver .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ICM Collector Current-Peak 32 A Ptot Total Dissipation@TC=25℃ 135 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.92 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N80
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ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V...