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8N80 - N-Channel MOSFET

Description

Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A Drain Current ID=8.0A@ TC=25℃ Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage

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Datasheet Details

Part number 8N80
Manufacturer INCHANGE
File Size 205.42 KB
Description N-Channel MOSFET
Datasheet download datasheet 8N80 Datasheet
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    isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A ·Drain Current –ID=8.0A@ TC=25℃ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay driver . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ICM Collector Current-Peak 32 A Ptot Total Dissipation@TC=25℃ 135 W Tj Max.
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