A1002 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

High Current Capability CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS

Designed for audio and general purpose applications.

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Datasheet Details

Part number	A1002
Manufacturer	Inchange Semiconductor
File Size	113.70 KB
Description	Silicon PNP Power Transistor
Datasheet	A1002 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A 120 W 150 ℃ 55~150 ℃ isc website：www.iscsemi.