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AD149 - PNP Transistor

General Description

Wide Area of Safe Operation DC Current Gain- : hFE=30-100@IC= -1A Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switch

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isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3.