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AOB298L Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

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General Description

·Drain Current ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 58 A ID(puls) Pulse Drain Current 130 A Ptot Total Dissipation@TC=25℃ 100 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W AOB298L .

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0;

Overview

isc N-Channel MOSFET Transistor ·.

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