Inchange Semiconductor AOB418L
N-Channel MOSFET
| Part No. | AOB418L |
|---|---|
| Datasheet | AOB418L Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 105A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 9.7mΩ(Max)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Be suitable for synchronous rectification for server and general purpose applications
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 105 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation @TC=25℃ 333 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.45 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS...