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AOB7S65L - N-Channel MOSFET

Features

  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOB7S65L ·FEATURES ·High speed switching ·Low gate input resistance ·Standard level gate drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous@TC=25℃ 7 IDM Drain Current-Single Pulsed 30 PD Total Dissipation 104 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.2 UNIT ℃/W isc website：www.iscsemi.
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