AOD1N60
AOD1N60 is N-Channel MOSFET manufactured by Inchange Semiconductor.
Features
- Drain Current
- ID=1.3A@ TC=25℃
- Drain Source Voltage-
: VDSS=600V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 9.0Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
Gate-Source Voltage-Continuous
±30
Drain Current-Continuous
Drain Current-Single Pluse
Total Dissipation @TC=25℃
Max. Operating Junction Temperature -50~150 ℃
Tstg
Storage Temperature
-50~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to...
