Datasheet4U Logo Datasheet4U.com

AOD2816 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 35A@ TC=25℃.
  • Drain Source Voltage- : VDSS=80V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOD2816

Datasheet Details

Part number AOD2816
Manufacturer INCHANGE
File Size 260.95 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD2816 Datasheet
Additional preview pages of the AOD2816 datasheet.

📁 Similar Datasheet

  • AOD2816 - 80V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD2810 - 80V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD280A60 - N-Channel Power Transistor (Alpha & Omega Semiconductors)
  • AOD200 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD200 - N-Channel MOSFET (Freescale)
  • AOD206 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD208 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD208 - N-Channel MOSFET (Freescale)
  • AOD210 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOD210 - N-Channel MOSFET (Freescale)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor AOD2816 FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 53.5 W TJ Max.
Published: |