Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Drain Current
- ID= 50A@ TC=25℃
- Drain Source Voltage-
: VDSS= 40V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 8mΩ(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Be suitable for synchronous rectification for server and general purpose applications
-...
