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AOD5T40P - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 3.9A@ TC=25℃.
  • Drain Source Voltage- : VDSS=400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =1.45Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – AOD5T40P

Datasheet Details

Part number AOD5T40P
Manufacturer INCHANGE
File Size 260.39 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD5T40P Datasheet
Additional preview pages of the AOD5T40P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor AOD5T40P FEATURES ·Drain Current –ID= 3.9A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.9 A IDM Drain Current-Single Pluse 15 A PD Total Dissipation @TC=25℃ 52 W TJ Max.
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