Datasheet4U Logo Datasheet4U.com

AOI4185 - P-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= -40A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOI4185 40V P-Channel MOSFET Alpha & Omega Semiconductors
AOI418 30V N-Channel MOSFET Alpha & Omega Semiconductors
AOI4184 40V N-Channel MOSFET Alpha & Omega Semiconductors
AOI4102 30V N-Channel MOSFET Alpha & Omega Semiconductors
AOI4126 100V N-Channel MOSFET Alpha & Omega Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
AOI418 N-Channel MOSFET
AOI4184 N-Channel MOSFET
AOI4102 N-Channel MOSFET
AOI4126 N-Channel MOSFET
AOI4130 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor AOI4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -40 A IDM Drain Current-Single Pluse -115 A PD Total Dissipation @TC=25℃ 62.5 W TJ Max.