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AOI423 - P-Channel MOSFET

Description

purpose applications.

Features

  • Drain Current.
  • ID= -70A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – AOI423

Datasheet Details

Part number AOI423
Manufacturer INCHANGE
File Size 261.34 KB
Description P-Channel MOSFET
Datasheet download datasheet AOI423 Datasheet
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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor AOI423 FEATURES ·Drain Current –ID= -70A@ TC=25℃ ·Drain Source Voltage- : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -30 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous -70 A IDM Drain Current-Single Pluse -200 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
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