Datasheet4U Logo Datasheet4U.com

AOI516 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 50A@ TC=25℃.
  • Drain Source Voltage- : VDSS=30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOI516

Datasheet Details

Part number AOI516
Manufacturer INCHANGE
File Size 268.97 KB
Description N-Channel MOSFET
Datasheet download datasheet AOI516 Datasheet
Additional preview pages of the AOI516 datasheet.

📁 Similar Datasheet

  • AOI516 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI510 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI514 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI518 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI508 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI538 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI5N40 - 4.2A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI11S60 - Power Transistor (Alpha & Omega Semiconductors)
  • AOI1N60 - 1.3A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI206 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor AOI516 FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 170 A PD Total Dissipation @TC=25℃ 50 W TJ Max.
Published: |