Part AOT10N65
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 256.20 KB
Inchange Semiconductor

AOT10N65 Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 250 W TJ Max.

Key Features

  • Drain Current –ID= 10A@ TC=25℃
  • Drain Source Voltage- : VDSS= 650V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation