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AOT3N100 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor AOT3N100.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 132 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.95 ℃/W isc website：.iscsemi.

Key Features

  • Drain Current.
  • ID= 2.8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 1000V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Alpha - Omega Semiconductors Logo AOT3N100 N-Channel MOSFET Alpha - Omega Semiconductors

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