Datasheet Summary
isc N-Channel MOSFET Transistor
Features
- Drain Current
- ID= 4A@ TC=25℃
- Drain Source Voltage-
: VDSS= 1000V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 4.2Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching...
