Datasheet4U Logo Datasheet4U.com

AOTF20C60P Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·General Lighting for LED and CCFL ·AC/DC Power supplies for Industrial, Consumer, and Telecom ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 50 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.5 ℃/W AOTF20C60P isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOTF20C60P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 5V;

Key Features

  • Drain Current.
  • ID=20A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

AOTF20C60P Distributor