Datasheet Summary
isc N-Channel MOSFET Transistor
Features
- Drain Current
- ID=20A@ TC=25℃
- Drain Source Voltage-
: VDSS=400V(Min)
- Static Drain-Source On-Resistance
: RDS(on) =0.25Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
- Designed for use in switch mode power supplies and general purpose...
