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AOTF2618L - N-Channel MOSFET

Features

  • With TO-220F packaging.
  • High speed switching.
  • Easy to use.
  • The most efficient high frequency switching performance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF2618L ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·The most efficient high frequency switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 22 16 70 PD Total Dissipation 23.
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