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AOTF2916L - N-Channel MOSFET

Datasheet Summary

Features

  • Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – AOTF2916L

Datasheet Details

Part number AOTF2916L
Manufacturer INCHANGE
File Size 271.52 KB
Description N-Channel MOSFET
Datasheet download datasheet AOTF2916L Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor AOTF2916L ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 23.5 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 6.38 UNIT ℃/W isc website：www.iscsemi.
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