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AOTF2916L - N-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for AOTF2916L (Reference)

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isc N-Channel MOSFET Transistor AOTF2916L ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari...

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·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 23.5 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 6.38 UNIT ℃/W isc website:www.iscsemi.