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AOW66412 - N-Channel MOSFET

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General Description

purpose applications.

Overview

isc N-Channel MOSFET Transistor AOW66412.

Key Features

  • Drain Current.
  • ID=120A@ TC=25℃.
  • Drain Source Voltage- : VDSS=40V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =1.9Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Alpha & Omega Semiconductors Logo AOW66412 N-Channel MOSFET Alpha & Omega Semiconductors

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