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APT18M80B - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID=19A@ TC=25℃.
  • Drain Source Voltage- : VDSS=800V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =0.53Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for APT18M80B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT18M80B. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=19A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.53Ω(Max) ·...

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S=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.53Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 70 A PD Total Dissipation @TC=25℃ 500 W TJ Max.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Microsemi Corporation Logo APT18M80B N-Channel MOSFET Microsemi Corporation
Microsemi Corporation Logo APT18M80S N-Channel MOSFET Microsemi Corporation

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