APT6035BVR - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	APT6035BVR
Manufacturer	INCHANGE
File Size	371.61 KB
Description	N-Channel MOSFET
Datasheet	APT6035BVR Datasheet
Additional preview pages of the APT6035BVR datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 280 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID=18A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) =0.35Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

APT6035BVR - Power MOSFET (Advanced Power Technology)
APT6035BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
APT6035AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6035SVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6030BN - N-Channel MOSFET (Advanced Power Technology)
APT6030BVFR - Power MOSFET (Advanced Power Technology)
APT6030BVR - Power MOSFET (Advanced Power Technology)
APT6030SVR - Power MOSFET (Advanced Power Technology)

Other Datasheets by INCHANGE

APT6030BVFR - N-Channel MOSFET
APT6030BVR - N-Channel MOSFET
APT6038BFLL - N-Channel MOSFET
APT6038BLL - N-Channel MOSFET
APT6010B2FLL - N-Channel MOSFET
APT6010B2LL - N-Channel MOSFET

Published: Mar 1, 2021 |