B1038
B1038 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
- Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
- plement to Type 2SD1310
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.6 A 30 W 150 ℃ -55~150 ℃
Product Specification
2SB1038 isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10m A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=...
