B1038 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A Complement to Type 2SD1310 APPLICATIONS

Designed for low frequency power amplifier applications.

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B1038 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	B1038
Manufacturer	Inchange Semiconductor
File Size	193.50 KB
Description	Silicon PNP Power Transistor
Datasheet	B1038 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.6 A 30 W 150 ℃ -55~150 ℃ Product Specification 2SB1038 isc website：www.iscsemi.