BBL4001 - N-Channel MOSFET

Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	BBL4001
Manufacturer	INCHANGE
File Size	244.68 KB
Description	N-Channel MOSFET
Datasheet	BBL4001 Datasheet
Additional preview pages of the BBL4001 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 74 A IDM Drain Current-Single Pulsed 296 A PD Total Dissipation 35 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.6 ℃/W BBL4001 isc website：www.iscsemi.

Published: Oct 22, 2020 |