Inchange Semiconductor BC369
PNP Transistor
| Part No. | BC369 |
|---|---|
| Datasheet | BC369 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
●High Current Low Voltage●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation Rth j-a Thermal Resistance,Junction to Ambient TJ Junction Temperature Tstg Storage Temperature Range VALUE -25 -20 -5 UNIT V V V -1 A 625 mW 200 ℃/W 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage V(BR)CEO V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage IE= -10μA; IC= 0 IC= -10mA; IB= 0 IC=-0.1mA; IE= 0 IC= -1A ; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -1V IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Coll...