Inchange Semiconductor BC548
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BC548 |
|---|---|
| Datasheet | BC548 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage●Complement to Type BC558
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For TV and home appliance equipment.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BC548 VALUE UNIT 30 V 30 V 5 V 100 mA 500 mW 150 ℃ -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=100μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 5mA ICBO Collector Cutof...