Datasheet Details
| Part number | BCR30AM-12LB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.10 KB |
| Description | Thyristor |
| Datasheet | BCR30AM-12LB-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor BCR30AM-12LB.
| Part number | BCR30AM-12LB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.10 KB |
| Description | Thyristor |
| Datasheet | BCR30AM-12LB-INCHANGE.pdf |
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·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=92℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX 600 600 30 UNIT V V A 300 A 0.5 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃ Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=45A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 3000 5000 μA 1.5 V 50 50 mA 50 2.5 V 4.0 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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